New Product
SUD50N04-05L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
120
V GS = 10 thru 5 V
120
100
80
60
4V
100
80
60
40
40
T C = 125 °C
20
3V
20
25 °C
- 55 °C
0
0
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
200
160
V DS - Drain-to-Source Voltage (V)
Output Characteristics
T C = - 55 °C
25 °C
0.010
0.008
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
120
125 °C
0.006
V GS = 4.5 V
V GS = 10 V
80
40
0
0.004
0.002
0.000
0
10
20
30
40
50
60
0
20
40
60
80
100
120
8000
V GS - Gate-to-Source Voltage (V)
Transconductance
10
I D - Drain Current (A)
On-Resistance vs. Drain Current
7000
6000
5000
C iss
8
6
V DS = 20 V
I D = 50 A
4000
3000
2000
4
1000
0
C rss
C oss
2
0
0
8
16
24
32
40
0
20
40
60
80
100
V DS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 72786
S-71661-Rev. B, 06-Aug-07
Q g - Total Gate Charge (nC)
Gate Charge
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